DocumentCode
2907010
Title
980 nm Al-free ridge waveguide distributed feedback lasers with lateral gain coupling
Author
Kamp, M. ; Hofmann, J. ; Forchel, A. ; Krakowski, M. ; Rondi, D. ; Guyaux, J.L. ; Chirlias, E. ; Glastre, G. ; Blondeau, R.
Author_Institution
Tech. Phys., Wurzburg, Germany
fYear
1999
fDate
1999
Firstpage
21
Lastpage
24
Abstract
We present Al-free gain-coupled lasers emitting at 980 nm with metal gratings patterned laterally to the laser waveguide. The process is based on standard ridge waveguide fabrication and requires no regrowth. For a sufficiently small waveguide, the evanescent field of the laser mode couples to the lateral grating. Ridge waveguide lasers were processed from an MOCVD grown Al free laser structure with a single InGaAs quantum well. The cw threshold currents are around 17 mA for a 1 mm long laser, differential efficiencies are 0.2 W/A. Monomode emission up to output power levels of 25 mW and sidemode suppression ratios of 45 dB have been obtained. The lasers are monomode over a wide range of temperature and current, indicating that the lateral coupling is sufficiently strong for stable DFB operation
Keywords
III-V semiconductors; MOCVD; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser stability; laser transitions; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1 mm; 17 mA; 25 mW; 980 nm; Al-free ridge waveguide distributed feedback lasers; InGaAs; InGaAs quantum well lasers; MOCVD grown; cw threshold currents; differential efficiencies; evanescent field; laser mode coupling; laser waveguide; lateral coupling; lateral gain coupling; lateral grating; metal gratings; output power levels; patterned laterally; ridge waveguide lasers; sidemode suppression ratios; single InGaAs quantum well; small waveguide; stable DFB operation; standard ridge waveguide fabrication; Distributed feedback devices; Gratings; Indium gallium arsenide; Laser feedback; Laser modes; MOCVD; Optical coupling; Optical device fabrication; Quantum well lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773625
Filename
773625
Link To Document