Title :
Complex coupled 1.55 μm DFB-lasers based on focused ion beam enhanced wet chemical etching and quantum well intermixing
Author :
Konig, H. ; Rennon, S. ; Reithmaier, J.P. ; Forchel, A. ; Gentner, J.L. ; Goldstein, L.
Author_Institution :
Dept. of Tech. Phys., Wurzburg Univ., Germany
Abstract :
A simplified method for the fabrication of complex coupled gratings for distributed feedback lasers was developed for 1.55 μm wavelength applications. By using ion beam implantation enhanced wet chemical etching in combination with quantum well intermixing a refractive index grating can be selfaligned with an absorption grating. The gratings are defined after a conventional ridge waveguide process lateral to the ridge by maskless focused ion beam implantation. Therefore no overgrowth step is necessary. As cleaved laser devices show side mode suppression ratios of more than 40 dB and stable single mode emission up to operation temperatures of 90°C
Keywords :
diffraction gratings; distributed feedback lasers; etching; focused ion beam technology; ion implantation; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.55 μm wavelength applications; 1.55 mum; 90 C; InGaAsP; absorption grating; as cleaved laser devices; complex coupled DFB laser gratings fabrication method; complex coupled DFB-lasers; conventional ridge waveguide process; distributed feedback lasers; focused ion beam enhanced wet chemical etching; ion beam implantation enhanced wet chemical etching; maskless focused ion beam implantation; operation temperatures; quantum well intermixing; self aligned refractive index grating; side mode suppression ratios; stable single mode emission; Chemical lasers; Distributed feedback devices; Gratings; Ion beams; Laser feedback; Optical coupling; Optical device fabrication; Quantum well lasers; Waveguide lasers; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773627
