Optically pumped GaInNAs-DFB lasers in the 1.1 μm range grown by ECR-MBE

Author

Reinhardt, M. ; Fischer, M. ; Forchel, A.

Author_Institution

Dept. of Tech. Phys., Wurzburg Univ., Germany

fYear

1999

fDate

1999

Firstpage

37

Lastpage

40

Abstract

We report on the growth, fabrication and characterization of index coupled 1^st order DFB lasers on GaInNAs. A good quaternary GaInNAs layer quality could be achieved by using solid source molecular beam epitaxy and an electron cyclotron resonance source for nitrogen generation. GaInNAs QW´s embedded in a waveguide laser structure were pumped optically. The evanescent field of the laser mode couples strongly to the effective refractive index modulation of a DFB grating on top of the ridge waveguide. Monomode emission peaks depending on the grating period are obtained at room temperature

Keywords

III-V semiconductors; cyclotron resonance; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser transitions; molecular beam epitaxial growth; optical fabrication; optical pumping; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.1 mum; DFB grating; ECR MBE; GaInNAs; GaInNAs QW; effective refractive index modulation; electron cyclotron resonance source; evanescent field; good quaternary GaInNAs layer quality; grating period; index coupled 1^st order DFB lasers; laser mode; monomode emission peaks; nitrogen generation; optical fabrication; optically pumped; optically pumped GaInNAs DFB lasers; ridge waveguide; room temperature; semiconductor growth; solid source molecular beam epitaxy; waveguide laser structure; Laser excitation; Laser modes; Optical coupling; Optical pumping; Optical refraction; Optical surface waves; Optical variables control; Optical waveguides; Pump lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773629

Filename

773629