Narrow-stripe selective MOVPE technology for high-quality strained InGaAsP MQW structures

Selective MOVPE technology is widely used for realizing advanced photonic integrated devices. Especially, narrow-stripe selective (NS) MOVPE which performs in less than 2 μm-wide open-stripe region can achieve not only in-plane bandgap control but also direct waveguide formation without any semiconductor etching process. Therefore, NS-MOVPE is the powerful method for achieving highly uniform device characteristics. However, the growth mechanism of NS-MOVPE is very complicated due to the surface migration effect on both a dielectric mask and a semiconductor. This paper shows the recent progress in the study of the surface migration effect for understanding the mechanism of NS-MOVPE and introduce the novel pulse-mode NS-MOVPE for achieving an excellent crystal-quality of strained InGaAsP MQW structures