Title :
Large number of periods in highly strained InGaAlAs/InGaAlAs MQW structures grown by metalorganic vapor-phase epitaxy
Author :
Tsuchiya, T. ; Takemoto, D. ; Taike, A. ; Aoki, M. ; Uomi, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We have found that the crystalline quality at the well-barrier interfaces of an InGaAlAs strain-compensated MQW structure grown by MOVPE is much higher than that of an InGaAsP strain-compensated MQW structure, especially for a high strain. A large number of periods (25) in a highly strained (+1.4%) InGaAlAs MQW structure was obtained while preserving high crystalline quality by using the InGaAlAs strain-compensated structure
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; interface structure; internal stresses; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; vapour phase epitaxial growth; InGaAlAs; InGaAlAs strain-compensated structure; MOVPE; crystalline quality; high crystalline quality; highly strained InGaAlAs/InGaAlAs MQW structures; metalorganic vapor-phase epitaxy; strain-compensated MQW structure; well-barrier interfaces; Capacitive sensors; Crystallization; Epitaxial growth; Epitaxial layers; Indium phosphide; Quantum well devices; Quantum well lasers; Temperature; Tensile strain; X-ray lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773631
