Title :
Longitudinal distribution analysis of InP growth in a horizontal MOVPE reactor for improved film quality
Author :
Asawamethapant, W. ; Sugiyama, M. ; Shimogaki, Y. ; Nakano, Y.
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Abstract :
We have investigated the longitudinal distribution of InP growth rate and film quality over the entire susceptor of a horizontal MOVPE with TMIn and TBP to understand cause of film roughness and to improve the film quality. We studied the effects of-source gas velocity, growth temperature, and V/III ratio. From these observations, we propose a reaction model to explain the cause of the film roughness. Based on this model, we could optimize the growth condition; by decreasing total pressure, and thereby enhancing the diffusion of precursors to suppress InP polymerization in gas phase, the film quality has been very much improved
Keywords :
III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V compound semiconductor; InP; InP growth; film quality; horizontal MOVPE reactor; longitudinal distribution; metalorganic vapor phase epitaxy; precursor diffusion; reaction model; surface roughness; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Rough surfaces; Scanning electron microscopy; Semiconductor films; Surface morphology; Surface roughness; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773633
