Title :
A simple method for optocouplers selection in the frame of space applications
Author :
Peyre, D. ; Binois, C. ; Mendenhall, M.H. ; Weller, R.A. ; Mangeret, R. ; Salvaterra, G. ; Montay, G. ; Beutier, T. ; Beaumel, M. ; Sorensen, R. Harboe ; Poivey, Ch
Abstract :
Proton irradiations were performed on three types of optocouplers at three energies 60 MeV, 100 MeV and 200 MeV, followed by a TID irradiation up to 75 kRAD. GEANT4 allowed the calculation of the fluences needed to induce the same NIEL. As a preliminary result, diode´s degradations can be predicted and only depend on the initial minority carrier lifetime τrr0 and not the technology.
Keywords :
aerospace instrumentation; carrier lifetime; optical couplers; photodiodes; TID irradiation; diode degradations; electron volt energy 60 MeV to 200 MeV; minority carrier lifetime; optocoupler selection; proton irradiations; space applications; Degradation; Energy loss; Protons; Radiation effects; Silicon; Transistors; CTR; GEANT4; NIEL; Optocouplers; minority carriers lifetime; protons;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994685
