Title :
High gain limiting amplifier for 10 Gbps lightwave receivers
Author :
Georgiou, G. ; Paschke, P. ; Kopf, R. ; Ham, R. ; Ryan, R. ; Tate, A. ; Burm, J. ; Schulien, C. ; Chen, Y.K.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
An InP HBT technology developed at Lucent Technologies Bell laboratories, with peak ft-100 GHz is used to design and fabricate a limiting amplifier with high gain and bandwidth margin at 10 Gbps. Feedback techniques are used to obtain >30 dB differential gain with >10 GHz bandwidth for the packaged chip. The design reduces current density with standard cell transistors to improve circuit reliability (at the expense of performance). Stable operating conditions are found by adjusting the DC bias tail currents. The limiting output is set by the current in the output stage. Open eyes are obtained even with >2 V differential output. Depending on the required output swing, the power consumption is 200-500 mW (at Vee~-3.5 to -4.5 V)
Keywords :
bipolar analogue integrated circuits; circuit stability; feedback amplifiers; integrated circuit design; integrated circuit reliability; integrated circuit technology; optical receivers; 10 GHz; 2 V; 200 to 500 mW; 3.5 to -4.5 V; DC bias tail currents; Gbps lightwave receivers; InP; InP HBT technology; Lucent Technologies Bell laboratories; bandwidth margin; circuit reliability; current density; differential gain; differential output; feedback techniques; high gain; high gain limiting amplifier; limiting amplifier design; limiting amplifier fabrication; limiting output; output stage; output swing; packaged chip; power consumption; stable operating conditions; standard cell transistors; Bandwidth; Circuits; Current density; Eyes; Feedback; Gain; Heterojunction bipolar transistors; Indium phosphide; Packaging; Tail;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773637
