Title :
InAs(P,Sb)/InAsSb LEDs emitting in the 3-4 μm range at room temperature
Author :
Stein, A. ; Behres, A. ; Heime, K. ; Wilk, A. ; Christol, P. ; Joullié, A. ; Brozicek, M. ; Hulicius, E. ; Simecek, T. ; Rushworth, S. ; Smith, L. ; Ravetz, M.
Author_Institution :
Inst. fur Halbleitertech., Tech. Hochschule Aachen, Germany
Abstract :
We report the emission characteristics of MOVPE-grown InAs(P,Sb)/InAsSb multiquantum-well (MQW) LEDs operating in the mid-infrared spectral range (3-4 μm). InAsP-InAsSb MQW structures exhibit at room temperature strong electroluminescence at 4.2 μm, allowing the detection of CO2. InAsPSb-InAsSb MQW structures show intense narrow (FWHM=75 nm) spontaneous emission around 3.3 μm up to 270 K. The difference in photoluminescence (PL) energies for InAs(P)/InAsSb and InAsPSb-InAsSb MQW structures is explained supposing that the InAsPSb/InAsSb system has type-I band alignment whereas the InAs/InAsSb and InAsP/InAsSb quantum-wells are type-II, which can be confirmed by our calculations
Keywords :
III-V semiconductors; MOCVD; electroluminescence; indium compounds; infrared sources; light emitting diodes; photoluminescence; semiconductor quantum wells; spontaneous emission; vapour phase epitaxial growth; 270 K; 3 to 4 mum; 3.3 mum; 4.2 mum; CO2; InAs(P,Sb)/InAsSb LEDs; InAsP-InAsSb; InAsP/ZnAsSb MQW structures; InAsPSb-InAsSb; InAsPSb/InAsSb MQW structures; InAsPSb/InAsSb system; MOVPE-grown; emission characteristics; gas detection; intense narrow spontaneous emission; mid-infrared spectral range; photoluminescence energies; room temperature; strong electroluminescence; type-I band alignment; Absorption; Atmospheric waves; Electroluminescence; Gases; Light emitting diodes; Monitoring; Photoluminescence; Physics; Quantum well devices; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773643
