Title :
A commercial 65nm CMOS technology for space applications: Heavy ion, proton and gamma test results and modeling
Author :
Roche, Philippe ; Gasiot, Gilles ; Uznanski, Slawosz ; Daveau, Jean-Marc ; Torras-Flaquer, Josep ; Clerc, Sylvain ; Harboe-Sorensen, R.
Author_Institution :
STMicroelectronics, Central CAD & Design Solutions, Crolles, France
Abstract :
This paper presents new experimental and modeling evidences that advanced commercial CMOS technologies get intrinsically harder against space radiations with technology downscaling. When further using innovative rad-hard design techniques, electrical performances and radiation-hardness can be both met in a commercial CMOS 65 nm.
Keywords :
CMOS integrated circuits; integrated circuit modelling; ions; protons; radiation hardening (electronics); space vehicle electronics; CMOS technology; gamma test; heavy ion; innovative rad-hard design techniques; proton; radiation-hardness; size 65 nm; space radiations; CMOS integrated circuits; CMOS technology; Flip-flops; Neutrons; Protons; Random access memory; Temperature measurement;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994696
