DocumentCode
2907357
Title
A commercial 65nm CMOS technology for space applications: Heavy ion, proton and gamma test results and modeling
Author
Roche, Philippe ; Gasiot, Gilles ; Uznanski, Slawosz ; Daveau, Jean-Marc ; Torras-Flaquer, Josep ; Clerc, Sylvain ; Harboe-Sorensen, R.
Author_Institution
STMicroelectronics, Central CAD & Design Solutions, Crolles, France
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
456
Lastpage
464
Abstract
This paper presents new experimental and modeling evidences that advanced commercial CMOS technologies get intrinsically harder against space radiations with technology downscaling. When further using innovative rad-hard design techniques, electrical performances and radiation-hardness can be both met in a commercial CMOS 65 nm.
Keywords
CMOS integrated circuits; integrated circuit modelling; ions; protons; radiation hardening (electronics); space vehicle electronics; CMOS technology; gamma test; heavy ion; innovative rad-hard design techniques; proton; radiation-hardness; size 65 nm; space radiations; CMOS integrated circuits; CMOS technology; Flip-flops; Neutrons; Protons; Random access memory; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location
Bruges
ISSN
0379-6566
Print_ISBN
978-1-4577-0492-5
Electronic_ISBN
0379-6566
Type
conf
DOI
10.1109/RADECS.2009.5994696
Filename
5994696
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