Gain linearity and bandwidth improvement of InP-based transimpedance amplifiers by feedback loop designs

Author

Chien, Feng-Tso ; Chan, Yi-Jen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

fYear

1999

fDate

1999

Firstpage

107

Lastpage

110

Abstract

InP-based transimpedance amplifiers with two different active feedback loop designs, i.e. a common-gate FET (CG-FET) feedback and a gate-source connected FET (GS-FET) feedback, have been fabricated, characterized, and compared with each other. Owing to a better linearity of a feedback resistance in GS-FETs, amplifiers with this feedback design exhibit a large^ΔVout at a small input current. Furthermore, the operational bandwidth of GS-FET feedback amplifier is also improved by eliminating the associated parasitic effect

Keywords

III-V semiconductors; amplifiers; feedback amplifiers; field effect devices; indium compounds; FET feedback; GS-FET feedback amplifier; InP; InP-based transimpedance amplifiers; active feedback loop designs; associated parasitic effect; bandwidth improvement; common-gate FET; feedback design; feedback loop designs; feedback resistance; gain linearity; gate-source connected FET; large^ΔVout; linearity; operational bandwidth; small input current; Bandwidth; Circuits; FETs; Feedback loop; Gold; Indium phosphide; Linearity; Optical amplifiers; Optical feedback; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773646

Filename

773646