Title :
LP-HVPE growth of S, Fe and undoped InP
Author :
Jahan, D. ; Söderström, D. ; Lourdudoss, S.
Author_Institution :
Lab. of Semicond. Mater., R. Inst. of Technol., Stockholm, Sweden
Abstract :
This study presents the result of low-pressure hydride vapour phase epitaxy of undoped and doped InP carried out in a commercial equipment designed for 3-inch wafers. Specially, InP:Fe growth with ferrocene has been investigated in order to provide high resistive semi-insulating material. Besides, a very good planarisation around mesas has been achieved by selective regrowth. Finally, to validate the equipment, Fabry-Perot lasers with a modulation bandwidth of 15 GHz have been realised by burying mesas with regrown InP:Fe
Keywords :
III-V semiconductors; indium compounds; iron; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; sulphur; vapour phase epitaxial growth; 15 GHz; 3 inch; Fabry-Perot laser; InP; InP:Fe; InP:S; LP-HVPE growth; doped InP; electrical resistivity; ferrocene; low-pressure hydride vapour phase epitaxy; mesa planarisation; modulation bandwidth; selective regrowth; semi-insulating material; undoped InP; Epitaxial growth; Gallium compounds; Indium phosphide; Inductors; Iron; Nitrogen; Ovens; Pressure control; Temperature; Weight control;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773650
