DocumentCode :
2907456
Title :
A 3V, 4.25Gb/s laser driver with 0.4V output voltage compliance
Author :
Fattaruso, John W. ; Sheahan, Benjamin
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
fYear :
2005
fDate :
18-21 Sept. 2005
Firstpage :
123
Lastpage :
126
Abstract :
The design of a 155Mb/s-4.25Gb/s laser driver in SiGe BiCMOS is described. A large output voltage compliance range that allows DC coupling to the laser diode is achieved with a translinear pseudodifferential output driver. Active back-termination is provided at the modulation output pins. Careful design of the level shift stage affords low deterministic jitter over a very wide range of bit rates. The dynamic performance is preserved over a wide range of modulation current with a segmented driver slice scheme.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; driver circuits; integrated circuit design; jitter; semiconductor lasers; 0.115 to 4.25 Gbit/s; 0.4 V; 3 V; DC coupling; SiGe; SiGe BICMOS; active back-termination; deterministic jitter; laser diode; laser driver; level shift stage; modulation current; modulation output pins; output voltage compliance; segmented driver slice scheme; translinear pseudodifferential output driver; BiCMOS integrated circuits; Bit rate; Diode lasers; Germanium silicon alloys; Jitter; Optical coupling; Optical design; Pins; Silicon germanium; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Print_ISBN :
0-7803-9023-7
Type :
conf
DOI :
10.1109/CICC.2005.1568623
Filename :
1568623
Link To Document :
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