Title :
Low temperature growth of GaInAs by MOVPE
Author :
Oe, Kunishige ; Okamoto, Hiroshi ; Nakao, Masashi
Author_Institution :
Kyoto Inst. of Technol., Japan
Abstract :
GaInAs epitaxial layers were grown at low temperature by Metalorganic Vapor Phase Epitaxy in order to develop metastable semiconductor materials of GaInAsBi. It is found that the limiting factor to lower the growth temperature in this growth system is the decomposition of TEGa in the presence of TMIn. Using InP dummy wafer to decompose the TEGa, GaInAs epilayers of good optical quality were grown even at 420 C
Keywords :
III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 420 C; GaInAs; GaInAsBi; InP dummy wafer; MOVPE; TEGa; TMIn; decomposition; epitaxial layers; good optical quality; limiting factor; low temperature growth; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Metastasis; Optical materials; Semiconductor materials; Substrates; Temperature distribution; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773652
