DocumentCode :
2907520
Title :
Selection of the optimal interleaving distance for memories suffering MCUs
Author :
Reviriego, Pedro ; Maestro, Juan Antonio ; Baeg, Sanghyeon ; Wen, ShiJie ; Wong, Richard
Author_Institution :
Univ. Antonio de Nebrija, Madrid, Spain
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
508
Lastpage :
511
Abstract :
As technology shrinks, Multiple Cell Upsets (MCU) are becoming a more prominent effect with a large impact on memory reliability. To protect memories from MCUs, single error correction codes (SEC) and interleaving are commonly used. The interleaving distance (ID) is selected such that all errors in an MCU occur on different logical words. This is achieved by using interleaving distances that are larger than the largest expected MCU. However, the use of a large interleaving distance usually results in an area increase and a more complex design. In this paper, the selection of the optimal interleaving distance is explored, minimizing area and complexity without compromising memory reliability.
Keywords :
digital storage; error correction codes; integrated circuit reliability; MCU; SEC code; memory reliability; multiple cell upset; optimal interleaving distance selection; single error correction code; Interleaving distance; MCU; Memory; Soft error;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
Type :
conf
DOI :
10.1109/RADECS.2009.5994704
Filename :
5994704
Link To Document :
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