Title :
Re-growth over grating-etched InGaAsP
Author :
Robinson, B.J. ; Bursik, J. ; Thompson, D.A. ; Weatherly, G.C. ; Streater, R.W.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Abstract :
The growth of InP by gas-source molecular beam epitaxy (GSMBE) over InGaAsP patterned with an etched grating has been investigated with emphasis on establishing the conditions to minimize both contamination at the re-growth interface and the mass re-flow during the in-situ, high temperature cleaning procedures. Transmission Electron Microscopy (TEM) has been used to determine the effects of mass transport into the bottom of the grating grooves, and Secondary Ion Mass Spectrometry (SIMS) profiling has yielded information on the residual contamination at the re-growth interface
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; surface cleaning; surface topography; transmission electron microscopy; InGaAsP; InP; InP regrowth; SIMS profiling; TEM; contamination; gas-source molecular beam epitaxy; grating grooves; grating-etched InGaAsP; high temperature cleaning; mass re-flow; Composite materials; Distributed feedback devices; Etching; Gratings; Hydrogen; Indium phosphide; Laser feedback; Planarization; Surface cleaning; Surface contamination;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773653
