Title :
Improved homogeneity of LP-MOVPE grown InP/GaInAsP heterostructure for DBR using an optimized liner and susceptor arrangement
Author :
Westphalen, R. ; Landgren, G. ; Stålnacke, B. ; Beccard, R.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
Growth of distributed Bragg reflectors and strain compensated MQW for 1550 nm VCSEL have been investigated in a AIX 200/4 LP-MOVPE system with a 3×2" wafer configuration using an improved liner and susceptor configuration. The shift in the stopband wavelength for DBR could be reduced by one order of magnitude down to +0.6% (+9 nm) within 40 mm diameter compared to the standard setup. For 1420 nm quaternary layers used in such DBR the area with a wavelength shift of less the 1 nm can nearly be doubled. In case of strain compensated MQW a similar improvement in wavelength homogeneity was observed, mainly due to reduced thickness variation from ±2.5% to ±0.8%
Keywords :
III-V semiconductors; MOCVD coatings; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; 1550 nm; 1550 nm VCSEL; 2 in; 3 in; 40 mm; DBR; InP-GaInAsP; LP-MOVPE grown InP/GaInAsP heterostructure; distributed Bragg reflectors; improved homogeneity; optimized liner and susceptor arrangement; reduced thickness variation; standard setup; stopband wavelength; strain compensated MQW; wavelength shift; Capacitive sensors; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Indium phosphide; Quantum well devices; Satellites; Tensile strain; Vertical cavity surface emitting lasers; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773654
