Title :
Monolithic 3D-ICs with single crystal silicon layers
Author :
Sekar, Deepak C. ; Or-Bach, Zvi
Author_Institution :
MonolithIC 3D Inc., San Jose, CA, USA
fDate :
Jan. 31 2012-Feb. 2 2012
Abstract :
Approaches to obtain monolithic 3D logic and memory ICs are proposed in this paper. 3-4x higher memory density with similar litho cost can be obtained with monolithic 3D memories, while benefits similar to a generation of scaling can be obtained with monolithic 3D logic by doubling the number of device layers. Well-known, manufacturing-friendly materials, process steps and device structures are used.
Keywords :
integrated logic circuits; integrated memory circuits; lithography; three-dimensional integrated circuits; device layers; device structures; lithography cost; manufacturing friendly materials; memory IC; memory density; monolithic 3D IC; monolithic 3D logic IC; process steps; single crystal silicon layers; Crystals; Flash memory; Logic gates; Silicon; Transistors; Very large scale integration; Wires;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
DOI :
10.1109/3DIC.2012.6262978
