Title :
SPICE parameters extraction methods of MOS transistors under ionizing irradiation action
Author :
Rusanovschi, V.I. ; Avram, A.I. ; Rusanovschi, M.
Author_Institution :
State Agency on Intellectual Property, Chisinau, Moldova
Abstract :
Effects occurring in the active elements of integrated circuits (IC), such MOSFETs, depend on dose accumulation summary, the absorption unit defects under the action of high energy particles. To modeled the MOSFETs parameters using SPICE simulation we must consider the degradation model of MOSFETs according with a relevant list of parameters for irradiation influence. That parameters must take into account also physics and topological characteristics of MOSTETs devices. Using this criteria, the simulation will involve a minimal set of parameters with relevant results in study of ionizing irradiation action.
Keywords :
MOSFET; SPICE; ionisation; radiation hardening (electronics); semiconductor device models; MOS transistors; MOSFET degradation model; MOSFET device topological characteristics; SPICE parameter extraction methods; absorption unit defects; active elements; high energy particles; integrated circuit; irradiation action ionization; topological characteristics; Integrated circuit modeling; MOSFETs; Mathematical model; Predictive models; Radiation effects; SPICE; Semiconductor device modeling; SPICE model; irradiation; parameters extraction; simulation;
Conference_Titel :
Electronics and Telecommunications (ISETC), 2012 10th International Symposium on
Conference_Location :
Timisoara
Print_ISBN :
978-1-4673-1177-9
DOI :
10.1109/ISETC.2012.6408073
