Title :
A BiCMOS ultra-wideband 3.1-10.6GHz front-end
Author :
Lee, Fred S. ; Chandrakasan, Anantha P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT Microsystems Technol. Lab., Cambridge, MA, USA
Abstract :
A direct-conversion receiver for 500MHz-wide FCC-compliant UWB pulses in the 3.1-10.6GHz licensed band is fabricated using 0.18μm SiGe BiCMOS. The packaged chip consists of a wideband LNA, filter, phase-splitter, 802.11a switchable notch filter, 3.1-10.6GHz LO amplifiers, mixers, and baseband channel-select filters/buffers. The average conversion gain, NF and input P1dB are 32dB, 4dB, and -41dBm respectively. The chip draws 30mA from 1.8V. Wireless testing of the receiver at 100Mbps reveals a 2.7×10-3 bit-error-rate at -81dBm sensitivity.
Keywords :
BiCMOS integrated circuits; buffer circuits; low noise amplifiers; microwave receivers; mixers (circuits); notch filters; radio receivers; ultra wideband technology; 0.18 micron; 1.8 V; 100 Mbit/s; 3.1 to 10.6 GHz; 30 mA; 32 dB; 4 dB; 500 MHz; BiCMOS ultra-wideband front-end; LO amplifiers; SiGe BiCMOS; UWB pulses; baseband channel-select buffers; baseband channel-select filters; conversion gain; direct-conversion receiver; mixers; phase-splitter; switch-able notch filter; wideband low noise amplifier; Baseband; BiCMOS integrated circuits; Broadband amplifiers; Filters; Germanium silicon alloys; Noise measurement; Packaging; Pulse amplifiers; Silicon germanium; Ultra wideband technology;
Conference_Titel :
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Print_ISBN :
0-7803-9023-7
DOI :
10.1109/CICC.2005.1568630
