• DocumentCode
    2907563
  • Title

    35×2 inch wafer MOVPE system for electronic and optoelectronic devices

  • Author

    Schmitt, T. ; Deufel, M. ; Strauch, G. ; Schmitz, D. ; Heuken, M. ; Juergensen, H.

  • Author_Institution
    AIXTRON AG, Aachen, Germany
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    147
  • Lastpage
    150
  • Abstract
    Results of the AIX 2600G3 planetary reactor(R) in the 35×2 inch configuration with Gas Foil Rotation(R) will be shown. Measurements including all seven 2 inch wafers of one satellite will be presented. As a further detailed study and tuning of the AIXTRON Planetary Reactor(R) system AIX 2600G3 in the 35 times 2 inch configuration, we investigated the depletion behaviour along the reactor radius using rotating, as well as intentionally fixed satellites. Very often doped DBR-structures are used as a mirror below the active region of the AlGaInP LED to increase the light output. So AlAs/GaAs distributed Bragg reflectors (DBR) were chosen to optimise the thickness homogeneity and gallium efficiency across the five 6 inch satellites in dependence of the total flow. Further on, we examined the influence of the total reactor pressure on the semiconductor layer composition via X-ray data of AlInP. To check the adjustments of our reactor configuration we chose the critical and very temperature sensitive material system AlGaInP, as well as AlGaInP-MQW structures
  • Keywords
    III-V semiconductors; MOCVD coatings; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; light emitting diodes; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 2 in; 35 in; 35×2 inch wafer MOVPE system; AlAs/GaAs distributed Bragg reflectors; AlGaInP; AlGaInP LED; Gas Foil Rotation; active region; electronic devices; light output; optoelectronic devices; reactor configuration; reactor radius; total reactor pressure; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Extraterrestrial measurements; Gallium arsenide; III-V semiconductor materials; Inductors; Mirrors; Satellites; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
  • Conference_Location
    Davos
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-5562-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1999.773656
  • Filename
    773656