Title :
Energy relaxation by multiphonon processes in partially ordered (Al 0.5Ga0.5)0.5In0.5P
Author :
Kita, T. ; Sakurai, M. ; Yamashita, K. ; Nishino, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
Abstract :
We demonstrate inelastic phonon scattering to be the dominant intradomain carrier-relaxation mechanism in partially ordered (Al0.5Ga0.5)0.5In0.5P. Carrier relaxation and recombination in partially ordered (Al0.5 Ga0.5)0.5In0.5P have been studied by selectively excited photoluminescence (PL) spectroscopy. The partial ordering of the column-III sublattices causes a multidomain structure in the epitaxial film. The strongly modulated near-resonant excitation efficiency enables selective excitation of the ordered domains with a ground-state transition energy below the excitation energy, In the selectively excited PL spectra, we observed LA-phonon resonances as well as LO-phonon resonances. The LA-phonon resonances are new phonon modes caused by zone-folding effects and alloy disordering effects in the ordered alloy. The observation of the phonon resonances in the PL spectra is discussed in analogy to hot exciton relaxation in higher dimensional semiconductor system and proposed to be intricately bound to the inhomogeneity of the ordered domain ensemble
Keywords :
III-V semiconductors; aluminium compounds; carrier relaxation time; electron-hole recombination; gallium compounds; indium compounds; phonon-phonon interactions; photoluminescence; semiconductor epitaxial layers; AlGaInP; carrier recombination; dominant intradomain carrier-relaxation mechanism; energy relaxation; epitaxial film; inelastic phonon scattering; multidomain structure; multiphonon processes; ordered domain ensemble; ordered domains; partially ordered material; selectively excited photoluminescence; zone-folding effects; Aluminum alloys; Fluctuations; Gallium alloys; Optical scattering; Phonons; Photoluminescence; Photonic band gap; Power engineering and energy; Resonance; Spectroscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773659
