Title :
Submicron transferred-substrate heterojunction bipolar transistors with greater than 8000 GHz fmax
Author :
Lee, Q. ; Martin, S.C. ; Mensa, D. ; Smith, R.P. ; Guthrie, J. ; Jaganathan, S. ; Mathew, T. ; Krishnan, S. ; Creran, S. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors. Devices with 0.4 μm emitter and 0.9 μm collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cut-off frequency fmax is 820 GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device measurement; submillimetre wave transistors; 0.4 mum; 110 GHz; 17.5 dB; 800 GHz; 820 GHz; AlInAs-GaInAs; AlInAs/GaInAs heterojunction bipolar transistors; power gain cut-off frequency; submicron transferred-substrate heterojunction bipolar transistors; unilateral gain; Cutoff frequency; Epitaxial layers; Fabrication; Frequency conversion; Frequency synthesizers; Gain; Heterojunction bipolar transistors; Polyimides; Substrates; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773662
