DocumentCode
2907651
Title
Total dose effects on a FD-SOI technology for monolithic pixel sensors
Author
Battaglia, Marco ; Bisello, Dario ; Contarato, Devis ; Denes, Peter ; Giubilato, Piero ; Mattiazzo, Serena ; Pantano, Devis ; Pozzobon, Nicola ; Tessaro, Mario ; Wyss, Jeff
Author_Institution
Dept. of Phys., Univ. of California, Berkeley, CA, USA
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
549
Lastpage
551
Abstract
A monolithic pixel detector in deep-submicron Silicon On Insulator (SOI) technology has been developed and characterized. This summary presents the first assessments of the effect of ionizing radiation as regards the total dose damage on single transistors in the technology used for the development of the first prototype chip. This work shows the decisive effect of the substrate bias condition during irradiation on the radiation induced damage on the electronics.
Keywords
electric sensing devices; silicon-on-insulator; transistors; FD-SOI technology; SOI technology; monolithic pixel detector; monolithic pixel sensor; silicon on insulator technology; substrate bias condition; total dose effect; Logic gates; MOSFETs; Radiation effects; Silicon; Silicon on insulator technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location
Bruges
ISSN
0379-6566
Print_ISBN
978-1-4577-0492-5
Electronic_ISBN
0379-6566
Type
conf
DOI
10.1109/RADECS.2009.5994712
Filename
5994712
Link To Document