DocumentCode :
2907651
Title :
Total dose effects on a FD-SOI technology for monolithic pixel sensors
Author :
Battaglia, Marco ; Bisello, Dario ; Contarato, Devis ; Denes, Peter ; Giubilato, Piero ; Mattiazzo, Serena ; Pantano, Devis ; Pozzobon, Nicola ; Tessaro, Mario ; Wyss, Jeff
Author_Institution :
Dept. of Phys., Univ. of California, Berkeley, CA, USA
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
549
Lastpage :
551
Abstract :
A monolithic pixel detector in deep-submicron Silicon On Insulator (SOI) technology has been developed and characterized. This summary presents the first assessments of the effect of ionizing radiation as regards the total dose damage on single transistors in the technology used for the development of the first prototype chip. This work shows the decisive effect of the substrate bias condition during irradiation on the radiation induced damage on the electronics.
Keywords :
electric sensing devices; silicon-on-insulator; transistors; FD-SOI technology; SOI technology; monolithic pixel detector; monolithic pixel sensor; silicon on insulator technology; substrate bias condition; total dose effect; Logic gates; MOSFETs; Radiation effects; Silicon; Silicon on insulator technology; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
Type :
conf
DOI :
10.1109/RADECS.2009.5994712
Filename :
5994712
Link To Document :
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