Design and characterization of a 50 GHz InP/InGaAs HBT amplifier

Author

Huber, A. ; Huber, D. ; Bergamaschi, C. ; Morf, T. ; Jäckel, H.

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

1999

fDate

1999

Firstpage

191

Lastpage

194

Abstract

The design and a complete small-signal, noise and linearity characterization ion of a direct-coupled, lumped broadband amplifier utilizing InP/InGaAs single heterojunction bipolar transistors (SHBT) was carried out. A -3 dB-bandwidth of 50 GHz with a DC-gain of 9.8 dB and a gain-peaking of only 1.2 dB were achieved. The noise figure is 7.5 dB over a large frequency range. In the frequency range from 2 to 50 GHz, the third-order intercept point and 1 dB compression point at the output have values from 17 to 10 dBm and 3 to 0 dBm, respectively

Keywords

DC amplifiers; III-V semiconductors; bipolar MIMIC; bipolar MMIC; bipolar analogue integrated circuits; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit noise; microwave amplifiers; millimetre wave amplifiers; wideband amplifiers; 2 to 50 GHz; 50 GHz; 7.5 dB; 9.8 dB; DC-gain; InP-InGaAs; InP/InGaAs HBT amplifier; InP/InGaAs single heterojunction bipolar transistors; bandwidth; compression point; design; direct-coupled lumped broadband amplifier; gain-peaking; noise figure; small-signal noise linearity characterization; third-order intercept point; Bandwidth; Broadband amplifiers; Distributed amplifiers; Feedback; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773666

Filename

773666