HEMT Millimeter - Wave Amplifiers

This paper describes the design and development of state-of-the-art millimeter-wave low noise amplifiers, each of which utilizes TRW´s High Electron Mobility Transistor (HEMT) as the active device. These amplifiers include a single stage 60 GHz amplifier that exhibits 5 to 6 dB gain across a 3.5 GHz bandwidth and has an associated noise figure of 3.3 to 4.0 dB, a two stage waveguide 60 GHz amplifier was designed which yielded a gain of 14 to 16 dB across the 58-63 GHz band, a three stage 60 GHz microstrip amplifier was also developed which yielded (16-18)dB gain and 4.8 - 5.2 dB noise figure over a 4 GHz bandwidth. These results represent new approaches to millimeter wave amplifier designs at frequencies through 60 GHz and advance the state-of-the-art in amplifier performance.