InP- and GaAs-based quantum cascade lasers

Author

Beck, M. ; Müller, A. ; Faist, J. ; Sirtori, C. ; Oesterle, U. ; Ilegems, M.

Author_Institution

Inst. de Phys., Neuchatel Univ., Switzerland

fYear

1999

fDate

1999

Firstpage

199

Lastpage

202

Abstract

We report quantum cascade lasers grown on InP and GaAs by molecular beam epitaxy. On InP, lattice matched structures exceeding 80 mW of pulsed optical power at room temperature are electrically tunable from 10.2 to 10.5 μm. Strain compensated heterostructures emitting at 4.9 μm operate almost up to room temperature. The first lasing AlGaAs/GaAs quantum cascade laser emitting at 9.4 μm and operating up to 160 K is also presented

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 10.2 to 10.5 mum; 160 K; 293 K; 4.9 mum; 80 mW; 9.4 mum; GaAs; InP; MBE growth; lattice matched structures; molecular beam epitaxy; pulsed optical power; quantum cascade lasers; room temperature; strain compensated heterostructures; Capacitive sensors; Gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical pulses; Quantum cascade lasers; Stimulated emission; Temperature; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773668

Filename

773668