Title :
InP- and GaAs-based quantum cascade lasers
Author :
Beck, M. ; Müller, A. ; Faist, J. ; Sirtori, C. ; Oesterle, U. ; Ilegems, M.
Author_Institution :
Inst. de Phys., Neuchatel Univ., Switzerland
Abstract :
We report quantum cascade lasers grown on InP and GaAs by molecular beam epitaxy. On InP, lattice matched structures exceeding 80 mW of pulsed optical power at room temperature are electrically tunable from 10.2 to 10.5 μm. Strain compensated heterostructures emitting at 4.9 μm operate almost up to room temperature. The first lasing AlGaAs/GaAs quantum cascade laser emitting at 9.4 μm and operating up to 160 K is also presented
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 10.2 to 10.5 mum; 160 K; 293 K; 4.9 mum; 80 mW; 9.4 mum; GaAs; InP; MBE growth; lattice matched structures; molecular beam epitaxy; pulsed optical power; quantum cascade lasers; room temperature; strain compensated heterostructures; Capacitive sensors; Gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical pulses; Quantum cascade lasers; Stimulated emission; Temperature; Tunable circuits and devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773668
