A 1.2V, 10MHz, low-pass Gm-C filter with Gm-cells based on triode-biased MOS and passive resistor in 0.13μm CMOS technology

Author

Jo, Jun-Gi ; Yoo, Changsik ; Jeong, Chunseok ; Jeong, Chan-Young ; Lee, Mi-Young ; Kwon, Jong-Kee

Author_Institution

Dept. of Electron. & Comput. Eng., Hanyang Univ., Seoul, South Korea

fYear

2005

fDate

18-21 Sept. 2005

Firstpage

195

Lastpage

198

Abstract

A 1.2V 10MHz low-pass Gm-C filter implemented with low-voltage Gm-cell based on passive resistor and triode-region MOSFET is described. The Gm-cell converts the input voltage to the output current by passive resistor for wider signal swing. For low-voltage operation, triode-region MOS transistors are widely used while the output resistance is improved by regulated gate cascode circuit. The 10MHz low-pass Gm-C filter was implemented in a 0.13μm CMOS technology and the measured input third order intercept point is 3dBV and 9.5dBV, respectively for in-band and out-of-band input.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit design; low-pass filters; resistors; 0.13 micron; 1.2 V; 10 MHz; CMOS technology; Gm-cells; MOS transistors; gate cascode circuit; low-pass Gm-C filter; passive resistor; triode-biased MOS; triode-region MOSFET; Application specific integrated circuits; CMOS technology; Cutoff frequency; Dynamic range; Low pass filters; Low voltage; MOSFETs; Passive filters; Resistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005

Print_ISBN

0-7803-9023-7

Type

conf

DOI

10.1109/CICC.2005.1568641

Filename

1568641