InP-based microcavity light emitting diodes emitting at 1.3 μm and 1.55 μm

Author

Depreter, B. ; Verstuyft, S. ; Moerman, I. ; Baets, R. ; Van Daele, P.

Author_Institution

Intec-IMEC, Ghent Univ., Belgium

fYear

1999

fDate

1999

Firstpage

227

Lastpage

230

Abstract

We present MOCVD-grown InP-based microcavity light emitting diodes emitting at 1300 nm and 1550 nm. They contain 3 InGaAsP quantum wells sandwiched in a λ cavity defined by an InP/InGaAsP distributed Bragg reflector and a 200 nm evaporated Au mirror. Enhanced spectral purity is demonstrated and we observe a total external quantum efficiency of at least 5%. This represents a substantial increase compared to the maximum efficiency that can be extracted from a single facet of a Lambertian source. To the authors´ knowledge these are the highest values ever reported for this kind of device

Keywords

III-V semiconductors; MOCVD coatings; indium compounds; light emitting diodes; microcavity lasers; quantum well lasers; λ cavity; 1.3 mum; 1.55 mum; 200 nm; 5 percent; InP-InGaAsP; InP-based microcavity light emitting diodes; InP/InGaAsP distributed Bragg reflector; LED; MOCVD-grown InP; enhanced spectral purity; evaporated Au mirror; quantum wells; total external quantum efficiency; Distributed Bragg reflectors; Fabrication; Gold; Indium phosphide; Light emitting diodes; Microcavities; Mirrors; Reflectivity; Refractive index; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773676

Filename

773676