• DocumentCode
    2907819
  • Title

    A high current driving charge pump with current regulation method

  • Author

    Shin, Soon-Kyun ; Kong, Bai-Sun ; Lee, Chil-Gee ; Jun, Young-Hyun ; Kim, Jae-Whui

  • Author_Institution
    Semicond. Bus., Samsung Electron. Co., South Korea
  • fYear
    2005
  • fDate
    18-21 Sept. 2005
  • Firstpage
    207
  • Lastpage
    210
  • Abstract
    This paper proposes a charge pump having a high driving capability for driving more than a load of 8 mA with a 5 V regulated output voltage. The output of the charge pump generates 5 V without any damages to the oxide using protection circuits, even though it uses 3 V MOS transistors. The prototype chip designed using 0.13 μm CMOS process provides the range of a 0∼25 mA load current and generates a well regulated 5 V output voltage with a flying capacitor of 500 nF and clock frequency of 500 KHz. The chip area is 0.21 mm2. The power efficiency is as much as 86% at 3.0 V supply.
  • Keywords
    CMOS integrated circuits; driver circuits; 0.13 micron; 3 V; 5 V; 500 kHz; 500 nF; CMOS process; MOS transistors; charge pump; current regulation method; flying capacitor; protection circuits; CMOS process; Charge pumps; Circuits; Clocks; Current control; MOS capacitors; MOSFETs; Protection; Prototypes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
  • Print_ISBN
    0-7803-9023-7
  • Type

    conf

  • DOI
    10.1109/CICC.2005.1568644
  • Filename
    1568644