Title :
Low dose rate test results of national semiconductor´s ELDRS-free bipolar comparators LM111 and LM119
Author :
Kruckmeyer, Kirby ; McGee, Larry ; Brown, Bill ; Miller, Linda
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
Many bipolar comparators have been shown to exhibit enhanced low dose rate sensitivity (ELDRS), where a product may have worse total ionizing dose (TID) performance when exposed to ionizing radiation at a relatively low dose rate than when exposed at a higher dose rate. This can be a significant issue for the space community where the application dose rate is typically much lower than the dose rates used to test and qualify products to a given radiation level. A characterization method has been defined in MIL-STD-883 to determine if a product could be considered to exhibit ELDRS. National Semiconductor has released new versions of the classic, and extensively studied, bipolar comparators, LM111 and LM119. These products have gone through the ELDRS characterization defined in MIL-STD-883, have been found not to exhibit ELDRS and have been rated to 100 krad(Si). The data are presented here.
Keywords :
bipolar analogue integrated circuits; comparators (circuits); integrated circuit testing; MIL-STD-883; TID performance; enhanced low dose rate sensitivity; ionizing radiation; national semiconductor ELDRS-free bipolar comparator LM111; national semiconductor ELDRS-free bipolar comparator LM119; radiation absorbed dose 100 krad; total ionizing dose performance; Legged locomotion; Military standards; Pins; Qualifications; Radiation effects; Testing; Transistors; Bipolar comparators; LM111; LM119; enhanced low dose rate sensitivity (ELDRS);
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994726