Title :
Uniformity of Fe-diffused semi-insulating InP wafers
Author :
Fornari, R. ; Görög, T. ; Jimenez, J. ; De la Puente, E. ; Grant, I. ; Brozel, M. ; Nicholls, M.
Author_Institution :
Istituto MASPEC, CNR, Parma, Italy
Abstract :
A study on the uniformity of Fe-diffused semi-insulating InP wafers is presented. The electrical characterisation showed that after the diffusion annealing the wafers became semi-insulating, with resistivities generally above 108 Ω cm and mobilities in the range 3000-4000 cm2/Vs. PL and resistivity mapping showed that the short range uniformity is excellent but that sometimes the wafers exhibit long range gradients of resistivity and luminescence intensity. The gradients are believed to be associated with temperature gradients inside the annealing furnace
Keywords :
III-V semiconductors; annealing; carrier mobility; diffusion; electrical resistivity; indium compounds; iron; photoluminescence; InP:Fe; carrier mobility; diffusion annealing; luminescence intensity; photoluminescence; resistivity; semi-insulating InP wafers; short range uniformity; wafer uniformity; Annealing; Conductivity; Furnaces; Indium phosphide; Iron; Luminescence; Mass spectroscopy; Performance evaluation; Pollution measurement; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773684
