Title :
XDXMOS: a novel technique for the double-gate MOSFETs logic circuits - to achieve high drive current and small input capacitance together
Author :
Koike, Hanpei ; Sekigawa, Toshihiro
Author_Institution :
Inst. of Nanoelectron. Res., Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
Abstract :
A novel technique for the double-gate MOSFETs digital circuit, called cross-drive XMOS (XDXMOS), is proposed. Detailed mixed-mode circuit and device simulation results show that, with a simple addition of a register to the double-gate device in the 4-terminal operation mode, XDXMOS can achieve high drive current and small input capacitance together, and that 45% better power consumption performance and 25% better operation speed performance improvement over the conventional 3-terminal operation mode can be attained, while maintaining the ability for such useful techniques as the multiple-Vt method and the adaptive Vt control.
Keywords :
MOS logic circuits; capacitance; electric current; mixed analogue-digital integrated circuits; shift registers; 3-terminal operation mode; 4-terminal operation mode; XDXMOS circuit; adaptive Vt control; cross-drive XMOS circuit; device simulation; double-gate MOSFET logic circuits; double-gate device; drive current; input capacitance; mixed-mode circuit; multiple-Vt method; operation speed; power consumption; Adaptive control; Capacitance; Circuit simulation; Digital circuits; Energy consumption; Logic circuits; MOSFETs; Programmable control; Threshold voltage; Voltage control;
Conference_Titel :
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Print_ISBN :
0-7803-9023-7
DOI :
10.1109/CICC.2005.1568653