DocumentCode
2907980
Title
Deep-level optical spectroscopy on iron acceptor doped in InP and InxGa1-xP
Author
Takanohashi, T.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1999
fDate
1999
Firstpage
267
Lastpage
270
Abstract
Spectral dependence of the photoionization cross sections for iron (Fe) acceptor doped in the liquid-phase-epitaxy-grown InP and Inx Ga1-xP (x=0.49) layers is determined by photocapacitance spectroscopy. The deep-level structures and the carrier-emission processes are precisely analyzed. For the crystal-field-split levels of Fe2+:5E and 5 T2, the fundamental transitions of 5E-Γ1, Γ15-5E in InP:Fe, and Γ15-5E, Γ15- 5T2 in InxGa1-xP:Fe are adequately described by the Lucovsky-model calculation. The optical thresholds and the crystal-field-split energies are determined accurately. The small difference between the optical and thermal energies indicates that the Fe acceptor level is perturbed weakly by the lattice vibration in the InP and InxGa1-xP. Nonexponential photocapacitance transient is observed in the Inx Ga1-xP:Fe for the alloying effects
Keywords
III-V semiconductors; crystal field interactions; deep level transient spectroscopy; deep levels; gallium compounds; indium compounds; iron; photocapacitance; photoionisation; semiconductor epitaxial layers; vibrational modes; InGaP:Fe; InP:Fe; Lucovsky-model; acceptor doped layers; crystal-field-split levels; deep-level structures; lattice vibration; liquid-phase-epitaxy; optical thresholds; photocapacitance spectroscopy; photoionization cross sections; spectral dependence; Atom optics; Crystals; Diodes; Electron optics; Indium phosphide; Ionization; Iron; Optical buffering; Spectroscopy; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773686
Filename
773686
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