A long-wavelength 10 V optical-to-electrical InGaAs photogenerator

Author

Dentai, A.G. ; Giles, C.R. ; Burrows, E.

Author_Institution

Lucent Technol., AT&T Bell Labs., Holmdel, NJ, USA

fYear

1999

fDate

1999

Firstpage

277

Lastpage

279

Abstract

A high-voltage back-illuminated InGaAs photogenerator capable of producing an open-circuit voltage of 4.3 V with 5 μW illumination at 1554 nm and 10.3 V with 500 μW has been successfully fabricated. Factors contributing to the photogenerator´s effectiveness were the large number of diode elements, N=30, a high short-circuit responsivity, r=0.025 A/W, and a low saturation current, I_s=3.95 nA. As a demonstration, the photogenerator was connected to a MEMS optical shutter to build a novel self-powered optical power limiter that might be used to implement autonomous signal power control in optical communication networks. It is expected that the high voltage generated by this device can facilitate the design of a large variety of useful optically powered long-wavelength lightwave circuits

Keywords

III-V semiconductors; gallium arsenide; indium compounds; micro-optics; optical communication equipment; optical limiters; p-i-n photodiodes; semiconductor epitaxial layers; 10.3 V; 1554 nm; 3.95 nA; 4.3 V; 5 muW; 500 muW; InGaAs; MEMS optical shutter; high-voltage back-illuminated photogenerator; open-circuit voltage; optical communication networks; optical-electrical photogenerator; photodiodes; saturation current; self-powered optical power limiter; short-circuit responsivity; Diodes; Indium gallium arsenide; Lighting; Micromechanical devices; Optical fiber communication; Optical fiber networks; Optical saturation; Power control; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773688

Filename

773688