• DocumentCode
    2908014
  • Title

    Radiation studies on the UMC 180nm CMOS process at GSI

  • Author

    Löchner, Sven ; Deppe, Harald

  • Author_Institution
    GSI Helmholtzzentrum fur Schwe-rionenforschung GmbH, Darmstadt, Germany
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    614
  • Lastpage
    616
  • Abstract
    GRISU test ASICs were irradiated with different types of heavy ions, fluences up to 1012 ions/cm2 and with a LET in the range of 1-60MeV cm2/mg. Cross section for SEU/SET were measured during the tests. Furthermore TID measurements were applied. Results on degradation and annealing are reported.
  • Keywords
    CMOS integrated circuits; application specific integrated circuits; GRISU test ASIC; LET; SEU-SET; TID measurements; UMC CMOS process; heavy ions; radiation studies; single event transient; single event upset; size 180 nm; total ionising dose effects; Application specific integrated circuits; Radiation effects; Semiconductor device measurement; Single event upset; Testing; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
  • Conference_Location
    Bruges
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0492-5
  • Electronic_ISBN
    0379-6566
  • Type

    conf

  • DOI
    10.1109/RADECS.2009.5994732
  • Filename
    5994732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2908014