DocumentCode
2908047
Title
A one time programming cell using more than two resistance levels of a polyfuse
Author
Fellner, Johannes
Author_Institution
Austriamicrosyst. AG, Unterpremstaetten
fYear
2005
fDate
21-21 Sept. 2005
Firstpage
263
Lastpage
266
Abstract
This paper shows the possibility to store more than one bit into a one time programmable (OTP) cell by using different resistance levels of a programmed polyfuse. The OTP cell is manufactured in a standard polycide 0.35mum process
Keywords
CMOS memory circuits; programmable circuits; 0.35 micron; OTP cells; one time programmable cell; polyfuse resistance levels; programmed polyfuse; standard polycide process; CMOS process; Electrons; Manufacturing processes; Silicides; Silicon; Switching circuits; Temperature; Transistors; Tungsten; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9023-7
Type
conf
DOI
10.1109/CICC.2005.1568657
Filename
1568657
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