Title :
A one time programming cell using more than two resistance levels of a polyfuse
Author :
Fellner, Johannes
Author_Institution :
Austriamicrosyst. AG, Unterpremstaetten
Abstract :
This paper shows the possibility to store more than one bit into a one time programmable (OTP) cell by using different resistance levels of a programmed polyfuse. The OTP cell is manufactured in a standard polycide 0.35mum process
Keywords :
CMOS memory circuits; programmable circuits; 0.35 micron; OTP cells; one time programmable cell; polyfuse resistance levels; programmed polyfuse; standard polycide process; CMOS process; Electrons; Manufacturing processes; Silicides; Silicon; Switching circuits; Temperature; Transistors; Tungsten; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9023-7
DOI :
10.1109/CICC.2005.1568657
