Title :
Proposal of a novel semiconductor optical waveguide isolator
Author :
Takenaka, Mitsuru ; Nakano, Yoshiaki
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Abstract :
A novel semiconductor optical waveguide isolator is proposed and analyzed. The proposed isolator has semiconductor optical amplifier (SOA) structure with a ferromagnetic metal (iron or nickel, for example) deposited on top for providing the magneto-optical effect as well as electrical contact. By nonreciprocal complex effective refractive index change through the magneto-optical effect and by appropriate current injection into SOA, only the backward-propagating light is to become subject to optical loss. The amount of nonreciprocal complex effective refractive index change has been estimated by a perturbation method. Wavelength dispersion and tolerance of fabrication errors have also been calculated. As a result the isolator is predicted to have practical isolation ratio (40 dB) with compact size (1.58 mm) at 1.55 μm wavelength, wide operation wavelength range, and large fabrication tolerance
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; magneto-optical isolators; Fe; InGaAsP; InP; Ni; backward-propagating light; compact size; current injection; electrical contact; fabrication errors; ferromagnetic metal; large fabrication tolerance; magneto-optical effect; nonreciprocal complex effective refractive index change; optical loss; perturbation method; practical isolation ratio; semiconductor optical amplifier structure; semiconductor optical waveguide isolator; wavelength dispersion; wide operation wavelength range; Isolators; Magnetooptic effects; Optical refraction; Optical variables control; Optical waveguides; Proposals; Refractive index; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773691