DocumentCode
2908071
Title
Si/InGaAs ultralow dark current wafer bonded photodetectors
Author
Levine, B.F. ; Pinzone, C.J. ; Hui, S. ; King, C.A. ; Leibenguth, R.E.
Author_Institution
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1999
fDate
1999
Firstpage
293
Lastpage
294
Abstract
A method of wafer bonding is demonstrated which significantly reduces the thermal expansion mismatch stress, by removing the substrate before the high temperature anneal, thereby allowing elastic accommodation of the thin device layers. Record low dark current Si/InGaAs pin detectors have been realized
Keywords
III-V semiconductors; dark conductivity; elemental semiconductors; gallium arsenide; indium compounds; photodetectors; silicon; thermal expansion; wafer bonding; Si-InGaAs; Si/InGaAs ultralow dark current wafer bonded photodetectors; elastic accommodation; high temperature anneal; pin detectors; substrate; thermal expansion mismatch stress; thin device layers; Annealing; Dark current; Detectors; Indium gallium arsenide; Indium phosphide; Photodetectors; Temperature; Thermal expansion; Thermal stresses; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773692
Filename
773692
Link To Document