InP power HEMTs with 36% PAE at 60 GHz

Author

Grundbacher, R. ; Nishimoto, M. ; Chin, T.P. ; Chen, Y.C. ; Lai, R. ; Yamauchi, D. ; Schreyer, G. ; Block, T. ; Medvedev, V. ; Streit, D.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1999

fDate

1999

Firstpage

307

Lastpage

310

Abstract

We present state-of-the-art V-band power added efficiency (PAE) and power performance of 0.15 μm gate length InGaAs-InAlAs-InP HEMTs. The 500 μm wide InP HEMTs were measured in a fixture under CW conditions at 60 GHz and demonstrated 36% PAE with an output power of 186 mW (22.7 dBm) at an input power of 17 dBm. These results represent the best combination of PAE and output power reported to date at this frequency for any solid state device. The results are attributed to an optimization of the heterostructure, which includes a graded channel, a graded Schottky barrier layer, and a depleted highly doped cap layer

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; 0.15 micron; 186 mW; 36 percent; 60 GHz; EHF; InGaAs-InAlAs-InP; InP power HEMTs; MM-wave HEMT; PAE; V-band; depleted highly doped cap layer; graded Schottky barrier layer; graded channel; heterostructure optimisation; power added efficiency; power performance; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Millimeter wave radar; Power generation; Schottky barriers; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773696

Filename

773696