DocumentCode
2908176
Title
An Iteration Approach for Optimization of Base Doping Profile in Si BJTs
Author
Khanduri, Gagan ; Panwar, B.S.
Author_Institution
Indian Inst. of Technol. Delhi, New Delhi
fYear
2007
fDate
26-28 Sept. 2007
Firstpage
25
Lastpage
28
Abstract
The paper presents an iterative scheme for optimizing the practical base doping profiles of conventional Si BJTs to minimize its base transit time. The analysis also provides the effect of minority carrier velocity saturation on total base transit time for homojunction bipolar transistors.
Keywords
bipolar transistors; carrier mobility; doping profiles; elemental semiconductors; iterative methods; semiconductor doping; semiconductor junctions; silicon; BJT; base doping profile; homojunction bipolar transistor; iterative scheme; minority carrier velocity saturation; Acceleration; Bipolar transistors; Delay effects; Doping profiles; Electrons; Iterative methods; Mathematical programming; Niobium; Optimization methods; Paper technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuits, 2007. ISIC '07. International Symposium on
Conference_Location
Singapore
Print_ISBN
978-1-4244-0797-2
Electronic_ISBN
978-1-4244-0797-2
Type
conf
DOI
10.1109/ISICIR.2007.4441787
Filename
4441787
Link To Document