Title :
An Iteration Approach for Optimization of Base Doping Profile in Si BJTs
Author :
Khanduri, Gagan ; Panwar, B.S.
Author_Institution :
Indian Inst. of Technol. Delhi, New Delhi
Abstract :
The paper presents an iterative scheme for optimizing the practical base doping profiles of conventional Si BJTs to minimize its base transit time. The analysis also provides the effect of minority carrier velocity saturation on total base transit time for homojunction bipolar transistors.
Keywords :
bipolar transistors; carrier mobility; doping profiles; elemental semiconductors; iterative methods; semiconductor doping; semiconductor junctions; silicon; BJT; base doping profile; homojunction bipolar transistor; iterative scheme; minority carrier velocity saturation; Acceleration; Bipolar transistors; Delay effects; Doping profiles; Electrons; Iterative methods; Mathematical programming; Niobium; Optimization methods; Paper technology;
Conference_Titel :
Integrated Circuits, 2007. ISIC '07. International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-0797-2
Electronic_ISBN :
978-1-4244-0797-2
DOI :
10.1109/ISICIR.2007.4441787
