Effect of Charge Bump on Series Resistance and Dynamic Performance of 4H-SiC Ka-Band IMPATT Oscillator

Simulation experiment is carried out on single drift region 4H-SiC based IMPATT devices for Ka-band operation. It is observed that 4H-SiC would far surpass its present rival Si in terms of power output and efficiency. However, the parasitic series resistance (Rs) would reduce the RF power output of the 4H-SiC IMPATTs. The value of Rs decreases as the doping profile of the diode changes from flat to low-high-low type with the incorporation of charge bump. Moreover, this study also establishes the advantages of low-high-low type IMPATT over its flat profile counterpart in terms of RF power output and efficiency.