Low-voltage, high-speed AlSb-InAsSb HEMTs

Author

Boos, J.B. ; Yang, M.J. ; Bennett, B.R. ; Park, D. ; Kruppa, W. ; Bass, R.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1999

fDate

1999

Firstpage

323

Lastpage

326

Abstract

We report on the fabrication and characteristics of antimonide-based HEMTs with an InAsSb channel. Infrared photoluminescence measurements at 5 K confirm that the addition of Sb changes the band structure from a staggered type-II heterojunction lineup to a type-I. These HEMTs with a 0.1 μm gate length exhibit decreased output conductance and improved voltage gain compared to previous AlSb/InAs HEMTs with similar gate length. At V_DS=0.6 V, a microwave transconductance of 700 mS/mm and an output conductance of 110 mS/mm were obtained corresponding to a voltage gain of 6. AlSb/InAs HEMTs have also been fabricated with a 60 nm gate length. These HEMTs exhibit-a low-field source-drain resistance of 0.35 Ω-mm and a measured f_T of 90 GHz at a drain voltage of only 100 mV. This f_T value is the highest reported for any FET at this drain voltage

Keywords

III-V semiconductors; aluminium compounds; band structure; electric admittance; high electron mobility transistors; indium compounds; microwave field effect transistors; 0.1 micron; 110 to 700 mS/mm; 60 nm; 90 GHz; AlSb-InAsSb; AlSb/InAsSb HEMTs; IR photoluminescence measurements; InAsSb channel; antimonide-based HEMTs; band structure; fabrication; high-speed HEMTs; low-voltage HEMTs; microwave transconductance; output conductance; staggered type-I heterojunction; voltage gain; Etching; Fabrication; Gallium arsenide; Gold; HEMTs; Heterojunctions; Indium compounds; Low voltage; MODFETs; Sheet materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773700

Filename

773700