Title :
InAs/GaAs quantum dots: a material for very highspeed, long-wavelength photodetectors on GaAs
Author :
Bottcher, E.H. ; Pirk, T. ; Pfitzenmaier, H. ; Heinrichsdorff, F. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
The potential of InAs/GaAs quantum dots (QDs) as photoactive material for very high-speed long-wavelength photodetectors on GaAs substrate is evaluated. We report on the dynamic photoresponse of surface-illuminated metal-semiconductor-metal (MSM) detectors containing one absorbing InAs/GaAs QD layer which is grown by MOCVD. Moreover, we present data on the internal quantum efficiency near 1.3 μm which provide an upper estimate of the αd product of a single QD layer. A 3-dB bandwidth of 35 GHz and a 1.3-μm internal efficiency of -3.1×10-4 is observed. A novel traveling-wave configuration of an InAs/GaAs QD MSM detector with drastically improved quantum efficiency is proposed and analyzed
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; quantum well devices; semiconductor quantum dots; αd product; 1.3 mum; 35 GHz; GaAs; GaAs substrate; InAs; InAs/GaAs QD MSM detector; InAs/GaAs quantum dots; MOCVD; absorbing InAs/GaAs QD layer; dynamic photoresponse; internal quantum efficiency; photoactive material; surface-illuminated metal-semiconductor-metal detectors; traveling-wave configuration; very highspeed long-wavelength photodetectors; Detectors; Gallium arsenide; Photodetectors; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; US Department of Transportation; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773701
