Improvement of Self-heating Effects in Nanoscale Multi-substrate Contact Field-effect Transistors

One of the key issues that block the development of silicon-on-insulator (SOI) CMOS technology is so-called self-heating effects (SHEs). In this paper, we have investigated the electrical characteristics of multi-substrate contact field-effect transistors (MSCFETs) depend on the gate length for the first time. The proposed structure of MSCFET can significantly diminish the thermal instability occurred in the channel region, chiefly owing to the substrate contacts. Additionally, due to the presence of the block oxide at the side of the Si-body, the short-channel effects (SCEs) can also be well controlled resulting in improved performance.