High performance GaInAs/AlGaAs quantum-dot light emitting diodes and lasers

Author

Schäfer, F. ; Klopf, F. ; Reithmaier, J.P. ; Forchel, A.

Author_Institution

Dept. of Tech. Phys., Wurzburg Univ., Germany

fYear

1999

fDate

1999

Firstpage

333

Lastpage

336

Abstract

We have fabricated GaInAs/AlGas single layer quantum-dot light emitting diodes and lasers by self-organized growth in a molecular beam epitaxy system. Due to the use of migration enhanced epitaxy GaInAs/GaAs quantum-dot electroluminescence with high efficiency at a wavelength of 1.3 μm was achieved. The lasers show emission at 0.94 μm and 0.99 μm with low threshold current densities (J_th=144 A/cm²) and high internal quantum efficiencies (95%). Up to a device temperature of 214°C ground state lasing was obtained

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; semiconductor quantum dots; 1.3 mum; GaInAs-AlGaAs; device temperature; electroluminescence; ground state lasing; high internal quantum efficiencies; high performance GaInAs/AlGaAs quantum-dot; light emitting diodes; low threshold current densities; migration enhanced epitaxy; molecular beam epitaxy system; quantum-dot lasers; self-organized growth; Epitaxial growth; Gallium arsenide; Land surface temperature; Light emitting diodes; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Semiconductor lasers; Superlattices; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773702

Filename

773702