Achievement of vertically stacked InAs quantum dots on InP emitting at 1.55 μm

Author

Fréchenges, S. ; Bertru, N. ; Drouot, V. ; Dehaese, O. ; Loualiche, S. ; Lambert, B.

Author_Institution

Lab. de Phys. des Solides, Inst. Nat. des Sci. Appliques, Rennes, France

fYear

1999

fDate

1999

Firstpage

337

Lastpage

339

Abstract

Due to the use of (311)_B InP substrate we grew InAs SAQD with similar qualities to the InAs/GaAs system. In addition a method using a growth interruption under P₂ over pressure makes the control of the PL peak emission of the quantum dots structure easy to monitor. Thus this peak position is tuned to 1.55 μm at room temperature. This method has also been used to grow vertically stacked QDs emitting at 1.55 μm with high efficiency

Keywords

III-V semiconductors; chemical beam epitaxial growth; indium compounds; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum dots; 1.55 mum; InAs; InP; InP substrate; P₂ over pressure; PL peak emission; growth interruption; high efficiency; room temperature; vertically stacked InAs quantum dots; Gallium arsenide; Indium phosphide; Laser tuning; Quantum dot lasers; Quantum dots; Stimulated emission; Substrates; Surface emitting lasers; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773703

Filename

773703