Contacting of buried InP-based layers by epitaxial overgrowth over patterned tungsten features

Author

Wernersson, L.-E. ; Jarlskog, L. ; Löfgren, A. ; Nilsson, N. ; Samuelson, L. ; Seifert, W. ; Suhara, M.

Author_Institution

Dept. of Solid State Phys., Lund Univ., Sweden

fYear

1999

fDate

1999

Firstpage

353

Lastpage

356

Abstract

Features of tungsten have been embedded in InP, with the aim of forming contacts to buried InP-based layers. The conditions for overgrowing W are investigated for various orientations using a ring-structure. The highest lateral growth rate is observed for angles of 30° and 60° from the [110]-direction and wires oriented in these directions may be completely overgrown without the formation of voids above the metal. A specific contact resistance of 4 10^-5 ½cm² has been measured between buried contacts and the n-type InP. Finally, we have studied the dependence of the intrinsic metal resistance on the overgrowth process. The data show that the metal resistance is reduced and values of about 30 ½/Sq for 30-nm-thick features are obtained

Keywords

III-V semiconductors; buried layers; contact resistance; indium compounds; metallic epitaxial layers; metallisation; semiconductor-metal boundaries; vapour phase epitaxial growth; 30 nm; InP-W; buried InP-based layers; buried contacts; contact resistance; contacts; epitaxial overgrowth; intrinsic metal resistance; lateral growth rate; n-type InP; patterned tungsten features; ring-structure; voids; Bipolar transistors; Contact resistance; Gallium arsenide; Gratings; Indium phosphide; Schottky barriers; Semiconductor materials; Temperature; Tungsten; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773707

Filename

773707