Title :
Progress with 100 mm diameter In0.53Ga0.47As/InP wafer processing
Author :
Olsen, Gregory H. ; Lange, Michael J. ; Sugg, Alan R. ; Ettenberg, Martin H. ; Sudol, John J. ; Cohen, Marshall J. ; Forrest, Steven R.
Author_Institution :
Sensors Unlimited Inc., Princeton, NJ, USA
Abstract :
Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm2. X-ray topography results indicate that low defect density (<10,000 cm-2) iron-doped InP substrates are available in 100 mm diameter. Low dark current results were also obtained with a a “spin-on” zinc diffusion technique whereby the source of zinc is “spun-on” much like a photoresist
Keywords :
III-V semiconductors; X-ray topography; arrays; dark conductivity; gallium arsenide; indium compounds; photodetectors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 100 mm; In0.53Ga0.47As-InP; InP; X-ray topography; dark current; defect density; epitaxial layers; lattice-matched material; photodetector array; shunt-resistance area products; spin-on diffusion; wafer processing; Capacitance; Circuits; Current measurement; Dark current; Density measurement; Electrical resistance measurement; Indium phosphide; Photodetectors; Thermal stresses;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773709
