Integration of optical amplifiers and passive waveguide devices on InP using selective area chemical beam epitaxy

Author

Harmsma, P.J. ; Leys, M.R. ; Verschuren, C.A. ; Vonk, H. ; Smit, M.K. ; Oei, Y.S.

Author_Institution

COBRA Inter-Univ. Res. Inst., Delft, Netherlands

fYear

1999

fDate

1999

Firstpage

365

Lastpage

368

Abstract

High quality butt joints were fabricated in the InGaAsP system using a Selective Area Chemical Beam Epitaxy (SA-CBE) regrowth step. Coupling losses were as low as 0.1 dB/interface for butt joints between similar transparent layer stacks. Active and passive regions were defined on a single chip using SA-CBE. Semiconductor optical amplifiers (SOAs) and transparent waveguides were fabricated in their appropriate regions. Extended cavity lasers, consisting of SOAs with passive waveguides on both sides, showed stable CW laser operation at a wavelength of 1.56 μm. SA-CBE offers maximum design flexibility, since each device can be fabricated in its own optimized layer stack

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical waveguides; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor optical amplifiers; 1.56 mum; CBE regrowth step; InGaAsP-InP; butt joints; coupling losses; extended cavity lasers; optical amplifiers; passive waveguide devices; selective area chemical beam epitaxy; transparent layer stacks; Integrated optics; Laser stability; Optical amplifiers; Optical devices; Optical waveguides; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773710

Filename

773710